OSRAM OLED GMBH

A method of producing an optoelectronic semiconductor component includes providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light, wherein the semiconductor layer sequence is structured into a plurality of pixels driven independently of each other, the carrier including multiple control units that drive the pixels, providing a conversion unit for converting the primary light into secondary light, wherein the conversion unit is grown continuously from semiconductor material, structuring the conversion unit, removing portions of the semiconductor material in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels, wherein at least two conversion units are grown on a common growth substrate, and wherein at least one of the conversion units is structured while still applied to the common growth substrate.

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

A placement device for placing optoelectronic components on electrical lines includes a holding device for holding at least one electric line extending in a longitudinal direction, and an application device for arranging optoelectronic components on the at least one electrical line.

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al 2 Li 2 O 2 N 2 ]:Eu, crystallized in the tetragonal space group P4 2 /m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Light-emitting component includes a light source and a dimming element arranged downstream of the light source in a radiation direction. The dimming element includes a dimming layer. The light source includes at least one emitter which is configured to emit light. A brightness of a light emitted by the light-emitting component is adjustable. The brightness is partially adjustable by way of a pulse width modulated and/or amplitude modulated operating signal for the emitter, and the brightness is partially adjustable by way of partial absorption and/or reflection of the light emitted by the emitter in the dimming element. A dimming capability of the dimming layer increases along an extension direction transverse to the radiation direction. The dimming layer is displaceable along the extension direction relative to the light source. A degree of absorption and/or reflection of light emitted by the emitter is variably adjustable.

A light fiber and an illuminating device are disclosed. In an embodiment a light fiber includes a cladding and at least two cores configured to conduct electromagnetic radiation, wherein each core comprises an incoupling surface at one end of the light fiber, wherein the incoupling surfaces of different cores are not contiguous, wherein each of the cladding and/or the cores includes at least one outcoupling zone configured to outcouple the electromagnetic radiation from the cores, wherein the light fiber is configured to emit at least a majority of the electromagnetic radiation in a region of outcoupling zone transverse to a main extension direction of the light fiber, wherein the cores are configured to guide primary radiation, and wherein the outcoupling zone is configured to mix the primary radiation so that mixed light is emitted from the light fiber.

An optoelectronic component comprising a laser diode is disclosed. In an embodiment an optoelectronic component includes a carrier, a laser diode arranged on the carrier, wherein the laser diode is configured to emit electromagnetic radiation in a lateral radiation and a radiation-guiding layer arrangement located in front of the lateral face of the laser diode, wherein the layer arrangement includes at least a first layer and a second layer, wherein the first layer is arranged on the carrier, wherein the second layer is arranged on the first layer, wherein the first layer and the second layer abut each other, wherein the second layer is transparent for the electromagnetic radiation, wherein the first layer has a smaller refractive index than the second layer, and wherein the layer arrangement is arranged such that the electromagnetic radiation of the laser diode is coupled into the second layer, guided in the second layer to a radiation surface of the second layer, and emitted via the radiation surface of the second layer.