PlayNitride Display Co., Ltd.

A mass transfer equipment is suitable for transferring microchips from a component substrate on a first carrier stage to a target substrate on a second carrier stage. Corresponding areas on the component substrate and the target substrate are departed by a distance in a second direction. An actuating unit controls the first and/or the second carrier stages to move. A rangefinder measures a movement of the component substrate in a first direction to obtain a first variation information and a movement of the target substrate in the first direction to obtain a second variation information. The first and the second variation information respectively include vectors of the corresponding areas on the component substrate and the target substrate in the second direction. A processing unit obtains a compensation value for changing the distance based on the first and/or the second variation information.

A display panel includes a display substrate, a reflective structure, micro-light-emitting elements, refractive structures and a light transparent structure. The reflective structure is disposed on the display substrate, and defines a surface of the display substrate as pixel areas. Each of the micro-light-emitting elements is disposed on one of the pixel areas and has an upper surface away from the display substrate. The upper surface defines a central area and a peripheral area surrounding the central area. Each of the refractive structures covers the peripheral area of one of the micro-light-emitting elements and exposes the central area of the one of the micro-light-emitting elements to form a notch. The light transparent structure covers the refractive structures and the micro-light-emitting elements. The light transparent structure fills each of the notches and contacts each of the central areas, and a refractive index of the light transparent structure is smaller than a refractive index of the refractive structure.

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 10 8 /cm 2 , or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.

A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

A micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer having a peripheral surface and an end surface. The micro light-emitting chip structure includes a first insulating layer, a reflective layer, and a second insulating layer that cover at least the peripheral surface and the end surface. The reflective layer is disposed on the first insulating layer. The second insulating layer is disposed on the reflective layer. The micro light-emitting chip structure includes an electrode disposed on the end surface and connected to the second-type semiconductor layer and a dielectric structure between the electrode and the reflective layer. The dielectric structure is connected to the first insulation layer and the second insulation layer and closes the part of the reflective layer adjacent to the electrode on the end surface, so as to electrically insulate the electrode from the reflective layer.

An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.

A pixel circuit includes two switch transistors, a scan line, two driving transistors, a signal source, and a light-emitting component. Each switching transistor has a channel, a gate-source voltage difference of each switch transistor has a potential interval for turning on the corresponding channel, and the potential intervals do not overlap. The scan line is electrically connected to a gate of each switch transistor to transmit a selection signal enabling the gate-source voltage difference to be in the corresponding potential interval of one of the switch transistors. In a saturation operation condition, slopes of tangent lines of transfer characteristic curves corresponding to a same gate-source voltage difference of the driving transistors are different. The signal source and the light-emitting component are connected between two ends of the driving transistors, or the light-emitting component is connected between the signal source and the driving transistors. A display panel is also provided.

A fabrication method for a display device includes the following operation. A first epitaxial structure layer and a second epitaxial structure layer are sequentially stacked on a first substrate. The second epitaxial structure layer and the first epitaxial structure layer are etched to form first micro-light-emitting elements and second micro-light-emitting elements. The first micro-light-emitting elements and the second micro-light-emitting elements are covered with a conductive layer. The conductive layer is patterned to be etched to expose the control panel. The conductive layer is divided into first conductive layers and second conductive layers. The first micro-light-emitting elements are correspondingly disposed in the first conductive layers. The second micro-light-emitting elements are correspondingly disposed in the second conductive layers. The first conductive layers disposed on the control panel and the second conductive layers disposed on the control panel are separated from each other and are electrically insulated from each other.

A display panel includes a circuit substrate, a patterned structure layer, a plurality of micro light-emitting chips, a plurality of refractive spheres and a filling layer. A plurality of pixel regions are defined on the circuit substrate. The patterned structure layer is disposed on the circuit substrate to separate the pixel regions and form a plurality of accommodating spaces respectively corresponding to the pixel regions. The micro light-emitting chips are connected to the circuit substrate and are respectively disposed in the accommodating spaces corresponding to the pixel regions. The refractive spheres are disposed on a side of the micro light-emitting chips away from the circuit substrate, and each refractive sphere is respectively accommodated in one of the accommodating spaces. In a direction parallel to a surface of the circuit substrate, the filling layer is filled between the patterned structure layer and each refractive sphere.

A method for manufacturing a display panel includes: providing multiple refractive spheres, in which the refractive spheres have different sizes; providing a first screening unit and a second screening unit, in which the first screening unit has a first screening size, and the second screening unit has a second screening size greater than or equal to the first screening size; placing the refractive spheres into the first screening unit to obtain a portion of the refractive spheres having a size greater than the first screening size; providing a carrier plate, and combining the second screening unit with the carrier plate, so that the second screening unit forms multiple accommodating spaces on the carrier plate; and placing the refractive spheres having a size greater than the first screening size into the second screening unit, so that the refractive spheres enter the accommodating spaces through the second screening unit.