SHANGHAI METAPWR ELECTRONICS CO., LTD

The invention provides a two-phase voltage regulator module, an N-phase voltage regulator module applying the two-phase voltage regulator module and a manufacturing process of the integrated inductor assembly, the two-phase voltage regulator module comprises a top plate assembly, an intermediate assembly and a bottom assembly; the top assembly comprises a top substrate; the intermediate assembly comprises a magnetic core, a first main winding, a second main winding, a first auxiliary winding, a second auxiliary winding, a first auxiliary electrical connector and a second auxiliary electrical connector; and the bottom assembly comprises a first expansion pin and a second expansion pin.

A power conversion device includes an input end, an output end, a first switch bridge arm, a second switch bridge arm, a first flying capacitor, a second flying capacitor, an output capacitor, and a magnetic assembly. Through a winding mode of a transformer winding, the requirement that the ratio of the input voltage to the output voltage is 5:1 or even 8:1 can be met, and the winding mode of the transformer winding and the layout of the power devices are optimized, so that the loss is reduced, and the size is reduced.

A voltage regulation module with low thermal resistance is provided. The voltage regulation module includes a top inductor and a bottom assembly. The top inductor includes a magnetic core and a winding, and the winding includes a first winding and a second winding; the bottom assembly comprises a bottom substrate and an IPM unit. The first winding and the second winding both comprise a first pin and a second pin. The first pin and the second pin are both arranged on the bottom surface of the magnetic core and are electrically connected with the bottom substrate; and the inductor. The IPM unit and the bottom substrate are sequentially stacked. The upward thermal resistance of the voltage regulation module is reduced by optimally designing the shape structure of the inductor winding and optimizing the thermal connection between the inductor winding and the IPM unit.

A mainboard includes at least one power supply module and a mainboard body. The power supply module is arranged on the mainboard body. The power supply module comprises at least one surface-mounted element, a carrier plate, and an insulating layer. The carrier plate is provided with a first surface and a second surface which are opposite to each other, and the surface-mounted element is arranged on the first surface and the second surface. The insulating layer is formed in a chemical vapor deposition mode; a gap is formed between the surface-mounted element and the carrier plate, the gap is not completely filled with the insulating layer, and the insulating layer is further at least partially arranged on the surface of the space where the gap is located.

The application relates to a VRM (four-phase anti-coupling VRM or VRM) adopting a four-phase anti-coupling inductor technology. By adopting a four-phase anti-coupling inductor technology, the VRM not only has rapid transient performance, but also has high conversion efficiency.

The application discloses a power semiconductor wafer of a high-frequency bridge arm integrated with a single crystal wafer. The power semiconductor wafer comprises a substrate and a device structure area, wherein the device structure area comprises a first switch area, a second switch area and a logic circuit area; a DC+ electrode, a DC− electrode and an SW electrode are arranged on the power semiconductor wafer; and the first switch area and the second switch area comprise long-strip-shaped areas parallel to the long edge and are arranged in parallel. Another aspect of the present application further provides a power conversion module, comprising a bridge arm circuit, wherein the bridge arm circuit comprises an outer decoupling capacitor and a power semiconductor wafer, or comprises an outer decoupling capacitor, a laminated decoupling capacitor and a power semiconductor wafer.

An inductor assembly includes an integrated inductor and signal assembly; the signal assembly includes a signal connector and a shielding layer; the shielding layer is arranged between the signal assembly and the integrated inductor, so that protecting the signal circuit from interference from the power circuit. A VRM module is provided. The VRM module includes an inductor assembly, a top assembly and a bottom assembly; the inductor assembly includes a magnetic core, a winding, VIN electrical connector and GND electrical connector; the top assembly includes a semiconductor switching device and an input capacitor; and an input power loop including VIN electrical connector, the GND electrical connector and the input capacitor is arranged around at least one part of the magnetic core.

The application provides a manufacturing method of a carrier plate, a power supply module and an assembling method of the power supply module. The manufacturing method of the carrier plate includes the following steps: step 1 , forming a substrate; step 2 , vertically drilling a hole, and forming a connector; step 3 , performing mechanical drilling to form a hole; and step 4 , performing depth-controlled milling groove, wherein the power supply module includes a carrier plate, a magnetic core, a first assembly and a third assembly; the magnetic core includes a magnetic column, a first magnetic cover plate and a second magnetic cover plate, the magnetic column penetrates through the hole, and the first magnetic cover plate and the second magnetic cover plate are respectively accommodated in the first depth-controlled groove and the second depth-controlled groove and are buckled with the magnetic column to form a second assembly.

The application provides an inductor structure. The inductor structure comprises a magnetic core, a first winding unit, a second winding unit and an insulating object/insulating composition, wherein the insulating object/insulating composition is pressed and has little rebound at normal temperature, so that the risk that the magnetic core is broken due to rebound of the insulating material during pressing can be effectively reduced; the resistivity of the insulating object/insulating composition is greater than or equal to 2 Mohm·m; and the melting temperature of the insulating object is smaller than the annealing temperature of the magnetic material. When the insulating object is subjected to high-temperature annealing, the insulating object is in at least part of the melting state, and the micropore structure between the particles of the magnetic core material can effectively buffer the volume expansion when the insulating object is melted.

The application discloses a half-turn winding transformer, a circuit topology and a power device The half-turn winding transformer comprises a magnetic core, two high-voltage windings and four low-voltage windings; the magnetic core comprises two magnetic substrates and at least three magnetic columns, and the at least three magnetic columns are arranged in a row. According to the half-turn winding transformer, the step-down ratio between various input voltages and output voltages of the intermediate bus conversion device can be realized, and the application of different output voltage requirements is met; and on the other hand, by designing the winding mode and the device layout of the transformer, the loss of the transformer is reduced, and the size of the transformer is reduced.