SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.

Disclosed herein is a method of recovering performance of a radiation detector, the radiation detector comprising: a radiation absorption layer configured to absorb radiation particles incident thereon and generate an electrical signal based on the radiation particles; an electronic system configured to process the electrical signal, the electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; the method comprising: removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator.

Disclosed herein is an imaging system, comprising: an image sensor which comprises: a system printed circuit board (system PCB); M group printed circuit boards (group PCBs (i), i=1, . . . , M) mounted on a mounting surface of the system PCB; and Ni radiation detectors mounted on the group PCB (i), for i=1, . . . , M, wherein M and Ni, i=1, . . . , M are integers greater than 1, wherein the image sensor is configured to scan a scene in a scanning direction, and wherein, for each group PCB (i), there is not a plane which (A) is parallel to a normal direction of the mounting surface of the system PCB, (B) is parallel to the scanning direction, (C) divides all active areas of the Ni radiation detectors into 2 groups of active areas, and (D) does not intersect any active area of all the active areas of the Ni radiation detectors.

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Disclosed herein is a method, comprising: capturing via an exposure a first image with a first radiation detector which comprises a first active area and a first dummy area, wherein the first dummy area is disposed between application-specific integrated circuit (ASIC) chips of the first radiation detector, and wherein the first image comprises (A) first regular picture elements corresponding to the first active area and (B) first dummy picture elements corresponding to the first dummy area; and determining values of the first dummy picture elements based on values of the first regular picture elements.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

Disclosed herein is a detector having a pixel in a substrate and configured to detect radiation particles incident thereon; a first guard ring in the substrate, surrounding the pixel, and comprising a first doped semiconductor region in the substrate and a first electrically conductive layer in electrical contact to the first doped semiconductor region. The first electrically conductive layer overhangs the first doped semiconductor region toward an interior of the first guard ring.

Disclosed herein are various methods of packaging a semiconductor X-ray detector. The methods may include bonding chips including an X-ray absorption layer or including both an X-ray absorption layer and an electronic layer onto another support such as an interposer substrate or a printed circuit board.

Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer configured to generate an electrical signal from an X-ray photon incident on the X-ray absorption layer; an electronics layer comprising an electronics system configured to process or interpret the electrical signal; and an interposer chip embedded in a board of an electrically insulating material; wherein the X-ray absorption layer is bonded to the electronics layer; wherein the electronics layer is bonded to the interposer chip.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.