Silanna UV Technologies Pte Ltd

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. At least one of the epitaxial semiconductor layers can include single crystal A x B 1−x O n , where: 0<x<1.0; A is Al and/or Ga; and B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. An epitaxial semiconductor layer of the device can include a first single crystal oxide material. The first single crystal oxide material can include: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The first single crystal oxide material can also include a cubic crystal symmetry.

The present disclosure relates to a semiconductor structure including a superlattice with repeating unit cells of a narrow bandgap (NBG) layer and a wide bandgap (WBG) layer. The NBG and WBG layers include an NBG and a WBG polar semiconductor material, respectively. An energy barrier region is in contact with the superlattice, including a total of N layers of alternating the WBG and NBG polar semiconductor materials, wherein a total thickness of the energy barrier region is equal to a thickness of N/2 unit cells of the superlattice, and wherein N is an even number greater than or equal to 4. Layers of the N layers of the energy barrier region, either WBG layers or NBG layers, are both thicker and thinner than a corresponding layer (either WBG or NBG) of the unit cell of the superlattice to form the energy barrier.

The techniques described herein relate to a transistor, including a substrate including SiC-4H, MgO, or AlGaO 3 ; an epitaxial channel layer on the substrate, and a gate layer on the epitaxial channel layer. The epitaxial channel layer can include Ga 2 O 3 with a first bandgap, wherein the Ga 2 O 3 is: α-Ga 2 O 3 with a hexagonal or trigonal crystal symmetry; κ-Ga 2 O 3 with an orthorhombic crystal symmetry; or γ-Ga 2 O 3 with a cubic crystal symmetry. The gate layer can include an oxide material with a second bandgap, where the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the gate layer.

In some embodiments, an optoelectronic semiconductor light emitting device includes: a substrate; and a plurality of epitaxial semiconductor layers disposed on the substrate. Each of the epitaxial semiconductor layers can comprise an epitaxial oxide. At least one of the epitaxial semiconductor layers can comprise an optically emissive material of direct bandgap type. At least one of the epitaxial semiconductor layers can comprise (Al x1 Ga 1−x1 ) 2 O 3 wherein 0≤x1≤1. The plurality of epitaxial semiconductor layers can comprise: first region comprising a first conductivity type; a second region comprising a not-intentionally doped (NID) intrinsic region; and a third region comprising a second conductivity type. The substrate and the plurality of epitaxial semiconductor layers can be a substantially single crystal epitaxially formed device. The optoelectronic semiconductor light emitting device can be configured to emit light having a wavelength in a range from 150 nm to 425 nm.

An LED (e.g., a UV-LED) structure includes a substrate, a first cathode layer, a second cathode layer, a light emitting layer, an anode layer, an anode contact, and a cathode contact. The first cathode layer has a first aluminum composition. The second cathode layer is disposed on top of the first cathode layer and has a second aluminum composition greater than the first aluminum composition. A two-dimensional electron gas (2DEG) layer is formed at an interface between the first cathode layer and the second cathode layer during operation of the LED structure.

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The plurality of first semiconductor layers can comprise a first short-period superlattice (SPSL). The chirp layer can comprise alternating layers of GaN layers and AlN layers. An average composition of Al/(Al+Ga) of the chirp layer changes throughout the chirp layer.

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or Ga 2 O 3 . Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from Ni z Ga 2(1−z) O 3−2z or Ni z Al 2(1z>) O 3−2z , where 0<z<1. In some cases, the second epitaxial oxide material can include Ni x (Al,Ga) y O z .

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.

A semiconductor structure can comprise a plurality of first semiconductor layers comprising wide bandgap semiconductor layers, a narrow bandgap semiconductor layer, and a chirp layer between the plurality of first semiconductor layers and the narrow bandgap semiconductor layer. The values of overlap integrals between different electron wavefunctions in a conduction band of the chirp layer can be less than 0.1 for intersubband transition energies greater than 1.0 eV, and/or the values of overlaps between electron wavefunctions and barrier centers in a conduction band of the chirp layer can be less than 0.4 nm −1 , when the structure is biased at an operating potential. The chirp layer can comprise a short-period superlattice with alternating wide bandgap barrier layers and narrow bandgap well layers, wherein the thickness of the barrier layers, or the well layers, or the thickness of both the barrier and well layers changes throughout the chirp layer.