SK enpulse Co., Ltd.

A polishing composition for a semiconductor process according to one embodiment of the present specification includes polishing particles and a nonionic surfactant. A contact angle of the polishing composition for a semiconductor process with respect to a silicon oxide film is 30° to 40°. When such a polishing composition for a semiconductor process is applied to a CMP process, a polished surface having improved flatness and reduced defect occurrence frequency may be provided, and convenience of a polishing process may be improved.

A polishing composition for a semiconductor process according to one embodiment of the present disclosure includes polishing particles and a first polishing control agent which is a cationic polymer. The first polishing control agent includes a cationic residue derived from a cationic compound and an acrylamide-based residue. The acrylamide-based residue includes a first acrylamide-based residue represented by Chemical Formula 1-1 below and a second acrylamide-based residue represented by Chemical Formula 1-2 below, which is distinct from the first acrylamide-based residue. In Chemical Formula 1-1, R 1 and R 2 are each independently hydrogen, a methyl group, or an ethyl group. In Chemical Formula 1-2, R 3 is hydrogen, a methyl group, or an ethyl group, and R 4 is an alkyl group having 3 to 10 carbon atoms or an alkoxyalkyl group having 2 to 10 carbon atoms. When the polishing composition having such characteristics is applied to a CMP process, the polishing composition may provide a polished substrate having a smoother surface while maintaining a polishing speed of at least a predetermined level.

The polishing composition for semiconductor process includes polishing particles, wherein an Rps value calculated by the following Formula 1 is 0.5 to 2: Rps = Ap As [ Formula ⁢ 1 ] in [Formula 1], Ap is a specific surface area of a micropore of the polishing particles, and As is a specific surface area of an external surface of the polishing particles.

Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below: 0 nm< Wr−Wo ≤3 nm  [Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH 4 OH, H 2 O 2 , and H 2 O.

A laminate for a blank mask includes a light-transmitting layer; a phase shift film disposed on the light-transmitting layer; and residual ions measured from a surface of the phase shift film through ion chromatography comprises at least one of sulfate ions in a concentration of 0 ng/cm 2 to 0.05 ng/cm 2 , nitric oxide ions in a concentration of 0 ng/cm 2 to 0.5 ng/cm 2 , or ammonium ions in a concentration of 0 ng/cm 2 to 5 ng/cm 2 , or any combination thereof. A sum of concentrations of the residual ions is more than 0.

A composition for semiconductor processing includes abrasive particles, and a dishing control additive, comprising a first dishing control additive and a second dishing control additive. The first dishing control additive includes a compound having a betaine group and a salicylic group or a derivative thereof, and the second dishing control additive includes an azole-based compound. The first dishing control additive includes 0.07 parts by weight or more based on 100 parts by weight of the abrasive particles, and the second dishing control additive includes 0.13 parts by weight or less based on 100 parts by weight of the abrasive particles.

Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to −0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 2θ of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 2θ of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1. AI ⁢ 1 = XM ⁢ 1 XQ ⁢ 1 XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.

The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.