SK enpulse Co., Ltd.

The present invention provides a polishing pad, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad, the surface zeta potential and its ratio of the polishing surface are controlled to specific ranges according to the type of polishing slurry, whereby it is possible to improve the characteristics of scratches and surface defects appearing on the surface of the semiconductor substrate and to further enhance the polishing rate.

The embodiment relates to a polishing pad that comprises a polishing layer. When pyrolysis oil obtained by pyrolyzing the polishing layer at 320° C. for 6 hours is analyzed by combustion-ion chromatography (C-IC) in accordance with the IEC 62321-3-2 standard, the content of chlorine (CI) is less than 10,000 ppm. Further, the pyrolysis oil can be used as a high-quality energy source through a refining process.

The polishing pad according to an embodiment can reduce noise and vibration in a specific frequency range. Accordingly, the polishing pad has excellent sound absorption characteristics since the maximum sound absorption coefficient satisfies 0.1 or more as measured at a frequency of 500 Hz to 4,000 Hz according to Equation 1. Thus, since it can minimize energy loss caused by heat energy or vibration energy in a CMP polishing process, it has an excellent polishing rate.

The polishing pad according to an embodiment comprises a top-pad that is brought into contact with a wafer to perform polishing and a sub-pad that is located on one side of the top-pad, wherein the polishing rate at a distance of 95 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer is greater than the polishing rate at a distance of 85 mm from the center of the wafer. As a result, the polishing rate and polishing flatness can be enhanced; in particular, the polishing rate profile characteristics of the polishing pad edge are excellent.

Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) 13 C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

The present disclosure relates to an endpoint detection window of a polishing pad for use in a polishing process. The polishing pad may prevent an error in detection of the endpoint of the polishing process by preventing a difference in endpoint detection performance from occurring due to a difference in the wavelength of a laser between polishing apparatuses. The present disclosure may also provide a method of fabricating a semiconductor device using the polishing pad.

The present invention relates to an environmentally friendly polishing pad and to a process for preparing the same. The polishing pad prepared from a polyurethane resin comprising a bio-based polymer polyol has excellent environmental friendliness and has physical properties such as hardness and modulus required for a CMP process. Thus, it can be used in the manufacture of semiconductor substrates to demonstrate excellent performance.

In the polishing pad according to an embodiment, the particle size of debris obtained during conditioning and the zeta potential of a debris solution are adjusted to specific ranges. As a result, it is possible to minimize the occurrence of defects and scratches during a CMP process while reducing the size of debris, thereby maintaining excellent physical properties and performance of the polishing pad.

The embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to the embodiment adjusts the surface roughness characteristics of the polishing pad after polishing, whereby the polishing rate can be enhanced, and the surface residues, surface scratches, and chatter marks of the wafer can be remarkably reduced.

The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.