TES CO., LTD

A substrate treating method for removing a dielectric by-product produced by etching a dielectric film formed on a substrate, includes: providing a gaseous boron compound into a reaction chamber to remove the dielectric by-product; and purging an inside of the reaction chamber. The boron compound is represented by B n X 3n , where X is hydrogen, alkyl, amino, or halogen, and n is a natural number greater than or equal to 1.

The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.

Disclosed is a substrate processing method for selectively etching a re-growth silicon oxide formed on a surface of a silicon oxide layer and having a density lower than a density of the silicon oxide layer. The method includes: (a) placing a substrate including the re-growth silicon oxide into a reaction chamber; and (b) supplying an etching gas into the reaction chamber to dry-etch the re-growth silicon oxide formed on the surface of the silicon oxide layer, wherein the dry-etching is performed using HF and H 2 O as an etching gas at about 40° C. or lower.

A substrate processing method using a chamber, which is provided with an upper showerhead, a substrate support, and a lower showerhead assembly, is disclosed. The substrate processing method includes: adjusting an etching amount for a lower surface and a bevel of a substrate by adjusting a substrate volume ratio and a substrate gas ratio; providing plasma while supplying an etching gas toward the lower surface of the substrate; and supplying purge gas above the substrate.

A substrate processing apparatus including a chamber, an upper showerhead, and a substrate support, is disclosed. The chamber is configured to provide a processing space for a substrate, and the upper showerhead is provided at an upper region of an interior of the chamber. The substrate support includes a substrate holder configured to support a lower surface of an edge of the substrate, and a lower showerhead provided at a lower region of the interior of the chamber and configured to supply process gas toward a lower surface of the substrate. The substrate holder is formed with a supply hole which is configured to supply the process gas toward a bevel of the substrate.

The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.

A method of manufacturing a display apparatus includes forming a semiconductor layer on a substrate, forming an insulating layer on the semiconductor layer, forming a photoresist pattern on the insulating layer, forming, by etching the insulating layer, a contact hole exposing at least a portion of the semiconductor layer, and performing a primary cleaning of the insulating layer in which the contact hole is formed using a cleaning gas including a fluorine-containing gas and a hydrogen-containing gas.

A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

A substrate processing method includes supplying plasma in an interior of a chamber and depositing a hard mask thin film on a top surface of a substrate. The depositing of the hard mask thin film includes applying a voltage in a predetermined waveform to a bias electrode included in an electrostatic chuck. The waveform includes: a first segment having a predetermined positive value; and a second segment converting to a predetermined negative value at an end of the first segment and configured to be a slope having a predetermined gradient. The waveform converts to the predetermined positive value at an end of the second segment, such that the first segment and the second segment are repeated.

Provided is a substrate processing apparatus including a chamber providing a processing space in which a process is performed on a substrate coated with an organic solvent using a fluid in a supercritical state, a tray unit supporting the substrate and provided to be inserted into the chamber and withdraw from the chamber through an opening of the chamber, and a detector configured to measure a resistance of the substrate.