TIANJIN SANAN OPTOELECTRONICS CO., LTD.

A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.

A light-emitting device includes a semiconductor epitaxial structure, a dielectric layer, a dielectric mesa surface, and a mesa lateral wall. The semiconductor epitaxial structure includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer. The dielectric layer is located on a side of the second conductive semiconductor layer away from the active layer. The dielectric mesa surface is defined by a portion of the dielectric layer exposed from the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer. The mesa lateral wall is defined by a side wall of the first conductive semiconductor layer, a side wall of the active layer, and a side wall of the second conductive semiconductor layer. The dielectric mesa surface is a non-roughened region.

A light-emitting diode is provided, at least including a semiconductor stack layer. The semiconductor stack layer has a first surface and a second surface opposite to each other, and includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked in that order from the first surface to the second surface. The active layer includes a multiple quantum well structure with multiple periods, and each period of the multiple quantum well structure includes a well layer and a barrier layer sequentially stacked in that order. An emission wavelength of the light-emitting diode is in a range of 605 nm to 730 nm. A number of the multiple periods of the multiple quantum well structure in the active layer is in a range of 5 to 25, and a thickness of the barrier layer is less than or equal to 100 Å.

A light-emitting diode includes an epitaxial stack, a dielectric layer, a metal reflective layer, a substrate, and an oxide protective layer. The epitaxial stack sequentially includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer along a direction from an upper surface to a lower surface. The dielectric layer is disposed on the lower surface of the epitaxial stack and has multiple through-holes. The metal reflective layer is disposed on a side of the dielectric layer facing away from the epitaxial stack and electrically connected to the epitaxial stack through the through-holes. The substrate is disposed on a side of the metal reflective layer facing away from the epitaxial stack. The oxide protective layer covers a sidewall of the metal reflective layer. Thus, metal migration of the metal reflective layer can be effectively prevented, leakage current can be avoided, and the product quality can be improved.

A semiconductor light-emitting component includes a semiconductor epitaxial structure that includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer includes a first current spread layer having a first and second parts which are stacked on one another. The first part has an average band gap greater than that of the second part. The second part is formed by alternately stacking first sub layers and second sub layers one on another. Each of the first sub layers has a band gap different from that of each of the second sub layers. A light-emitting device including the semiconductor light-emitting component is also disclosed.

A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.

A light-emitting device includes a light-emitting laminating structure having an ohmic contact layer, a transition layer, a current-spreading layer, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The current-spreading layer has aluminum, and, in the current-spreading layer, a relative content of the aluminum with respect to a composition of the current-spreading layer is fixed. The transition layer has aluminum, and, in the transition layer, a relative content of the aluminum with respect to a composition of the transition layer is less than the relative content of the aluminum in the current-spreading layer. A method for producing the light-emitting device is also disclosed.

In a light-emitting diode, a projection of a current spreading layer in a direction from a first surface to a second surface does not overlap with a projection of a first electrode in the direction from the first surface to the second surface, the projection of the current spreading layer in the direction from the first surface to the second surface has a minimum distance from a geometric center of a projection of a pad electrode in the direction from the first surface to the second surface, and a projection of a first ohmic contact layer in the direction from the first surface to the second surface is located outside a circumference centered at the geometric center of the projection of the pad electrode in the direction from the first surface to the second surface with a radius of the minimum distance.

A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a semiconductor epitaxial stacking layer is formed with a mesa structure, and a current spreading layer is formed in a region of the mesa structure and an edge region of a periphery of the mesa structure. The current spreading layer in the edge region is used as an etching stop layer. When the semiconductor epitaxial stacking layer is etched to form the mesa structure, the current spreading layer in a cutting region outside the mesa structure is used as the etching stop layer. During an etching process, an ICP signal can be accurately cut off when the current spreading layer is identified, so that the etching accurately stops after the semiconductor epitaxial stacking layer is etched to prevent a contact interface between the exposed semiconductor epitaxial stacking layer and a transparent dielectric layer to form a side etching gap.

A light-emitting diode and a light-emitting device are provided. The light-emitting diode defines that a distance between geometric centers of adjacent platform regions in the current spreading layer is equal, that is, a circle is drawn with a geometric center of any platform region as a center and the distance between the geometric centers of adjacent platform regions as a radius, and centers of adjacent platform regions are located on the circle. Thus, the adjacent platform regions form a complementary pattern when current spreads. Taking one platform region as an example, an overlapping area of the current spread between any adjacent platform regions is equal, thereby achieving an effect of uniform current diffusion. In addition, formation of the recessed regions correspondingly reduce a content of the current spreading layer (such as GaP), thereby reducing the light absorption of the current spreading layer and increasing the light-emitting rate of the chip.