Ulvac, Inc.

A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ 1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ 2 to the third electrode. A relationship of λ 1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.

An alignment apparatus according to the embodiments includes a plate, first to fourth connectors, first to third supports, a first driver, and a first holder. The first holder is configured to hold a tray on which a substrate is accommodated. The alignment apparatus may adjust a position and an angle of the tray in six degrees of freedom to more precisely align a mask and the substrate with each other.

The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming Si x O y α z ; wherein a is any one of F, Cl, H, and C k H l ; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

A method for selectively etching a silicon nitride film can include supplying a hydrogen fluoride gas to an etching subject while heating the etching subject so that a temperature of the etching subject is maintained at a predetermined temperature included in a range of a first temperature to a second temperature, inclusive. The method can include supplying active radicals generated from a radical generation gas to the etching subject while heating the etching subject so that the temperature of the etching subject after being supplied with the hydrogen fluoride gas is maintained at the predetermined temperature.

[Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor. [Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.

An etching method includes generating reactive plasma containing hydrogen and nitrogen in a discharge tube having an inner surface formed from an inorganic oxide and supplying the reactive plasma to a processing chamber connected to the discharge tube, and generating a precursor containing fluorine and hydrogen in the processing chamber using the reactive plasma and a gas containing fluorine and supplying the precursor to an etching subject arranged in the processing chamber. The etching method includes supplying hydrogen plasma to the inner surface of the discharge tube in which the reactive plasma was generated, and supplying oxygen plasma to the inner surface to which the hydrogen plasma was supplied.

A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.

A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

Provided is an etching apparatus for etching a silicon oxide film using a processing gas containing hydrogen fluoride and ammonia, including: a chamber; a gas supply unit; a water vapor supply unit; and a control unit. The chamber is configured such that a substrate having the silicon oxide film on a surface thereof can be disposed therein. The gas supply unit is configured to be capable of supplying one of the processing gas and a precursor gas of the processing gas to the chamber. The water vapor supply unit is capable of supplying water vapor to the chamber. The control unit controls the gas supply unit and the water vapor supply unit to supply the water vapor and one of the processing gas and the precursor gas to the chamber during etching processing.

The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming Si x O y α z ; wherein a is any one of F, Cl, H, and C k H l ; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.