Ulvac, Inc.

A deposition equipment for display devices includes a chamber including a first gate and a second gate. A deposition source is disposed in the chamber. A stage is disposed on the deposition source. A mask structure is disposed on the stage. The mask structure includes a frame and a mask disposed on the frame. A driving mechanism is disposed on the mask structure. A transfer track has a first portion disposed inside the chamber and a second portion disposed outside the chamber. The transfer track extends through the first gate of the chamber and the second gate of the chamber. A first adsorption area of a first surface of the frame adsorbed by the driving mechanism and a second adsorption area of an opposite second surface of the frame adsorbed by the stage at least partially overlap each other.

Provided is a deep ultraviolet LED having an improved light extraction efficiency (LEE). The deep ultraviolet LED with an emission wavelength λ includes, in order from an opposite side of a substrate: a p-type electrode layer made of indium tin oxide (ITO); a p-GaN contact layer; a p-AlGaN layer transparent to the wavelength λ; an electron barrier layer transparent to the wavelength λ; a multi-quantum well layer transparent to the wavelength λ; and a n-AlGaN layer transparent to the wavelength λ. The deep ultraviolet LED includes a photonic crystal periodic structure having a plurality of pillars within a range in a thickness direction from an upper portion of the p-type electrode layer to an inside of the n-AlGaN layer, in a direction of the substrate. The photonic crystal periodic structure has a photonic band gap that is open to a TM polarized component. A period a of the photonic crystal periodic structure satisfies a Bragg condition (m×λ/n eff =2a, m: order, n eff : effective refractive index of the photonic crystal periodic structure) with respect to a light with the wavelength λ, the order m satisfies 3≤m≤7, and a radius R of the pillar satisfies 0.25≤R/a≤0.35.

An anode structure according to an embodiment of the present disclosure is an anode structure applied to an anode of a lithium-ion secondary battery. The anode structure includes: an anode current collector, and a lithium alloy layer formed on the anode current collector. The lithium alloy layer has a stoichiometric composition represented by the formula Li 1-x-y Bi x Mg y (0<x+y≤0.124, 0≤x≤0.024, 0<y≤0.10), and the lithium alloy layer has a thickness of 1 μm or more and 20 μm or less.

A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ 1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ 2 to the third electrode. A relationship of λ 1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.

A vacuum evaporation method includes a vaporization step in which use is made of an evaporation boat including: a boat main body having a containing part of an evaporation material as an evaporation source; and electrode mounting plate parts respectively extending outward at both ends of the boat main body. A wire-shaped evaporation material is fed from above a bottom plate of the boat main body defining the containing part of the evaporation material, in a manner to come into contact with the bottom plate. Electric current is applied across both the electrode mounting plate parts in order to heat the boat main body, thereby evaporating the evaporation material inside the containing part. The vacuum evaporation method further includes a displacement step of continuously or intermittently displacing, while the wire-shaped evaporation material is being fed, a front end part of the wire-shaped evaporation material relative to the boat main body.

An etching subject includes a silicon nitride film and a silicon oxide film. A method for selectively etching the silicon nitride film includes etching a surface oxide layer of the silicon nitride film by supplying a hydrogen fluoride gas to the etching subject, and then supplying radicals to the etching subject. The method further includes selectively etching the silicon nitride film by repeating a cycle. The cycle includes supplying the hydrogen fluoride gas to the etching subject, from which the surface oxide layer has been etched, and then supplying radicals to the etching subject. A ratio of an etching amount of the silicon nitride film relative to an etching amount of the silicon oxide film is referred to as a selectivity ratio. A first selectivity in the etching the surface oxide layer is lower than a second selectivity ratio in the selectively etching the silicon nitride film.

A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 of a vacuum atmosphere, an electric power with a negative potential is supplied to a target 2 , a positive potential is applied to the reflector plate 4 , a plasma is generated, and subsequently the supply of the sputtering gas is stopped, then the target is sputtered while a self-holding discharge under low pressure of plasma is generated. A high-frequency bias power is supplied from a high-frequency power source 61 through an impedance matching device 62 to a stage 5 on which an object to be deposited is mounted. An electron matcher having at least one variable reactor to be electronically controlled is used as an impedance matching device, and a high-frequency bias power is intermittently supplied to the stage at a predetermined frequency.

A deposition device for a display device includes: a chamber, a deposition source in the chamber, a stage on the deposition source; a mask structure on the stage; a substrate tray on the mask structure; a magnet plate on the substrate tray; a transport track passing through a first gate of the chamber and a second gate of the chamber and disposed inside the chamber and outside the chamber, a first carrier transporting the mask structure along the transport track; and a second carrier transporting the substrate tray along the transport track.

A peeling device includes: a transport unit; a carrier movable on and along the transport unit and having a substrate tray accommodated therein; a rotatable peeling stage disposed on the transport unit; a support disposed on the peeling stage and movable on the peeling stage along an upstream direction of the transport unit, a downstream direction of the transport unit, a downward direction toward the peeling stage, and an upward direction opposite to the downward direction, and rotatable in a first rotation direction, and a second rotation direction opposite to the first rotation direction; a gripper connected to the support so as to be disposed between the support and the peeling stage; and a static eliminator disposed on a side of the peeling stage.

A bonding device includes a transport unit, a carrier movable on and along the transport unit and having a substrate tray accommodated therein, a rotatable bonding stage disposed on the transport unit, a support disposed on the bonding stage and movable on the bonding stage along an upstream direction of the transport unit, a downstream direction of the transport unit, a downward direction toward the bonding stage, an upward direction opposite to the downward direction, a first rotation direction toward the upstream direction, and a second rotation direction toward the downstream direction and a gripper connected to the support so as to be disposed between the support and the bonding stage.