Versum Materials US, LLC

A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid, an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about −20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Methods of using high-purity alkynes substantially free of residual alkyl halides, water and/or carboxylic acids and their use (e.g., in formulations) for enhanced passivation of metallic substrates.

An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I: wherein R 1 and R 2 are each independently selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, and a C 6 to C 10 aryl group with a proviso that R 1 and R 2 cannot be both hydrogen; R 3 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, and a C 6 to C 10 aryl group; and either R 1 and R 2 are linked to form a cyclic ring structure or R 1 and R 2 are not linked to form a cyclic ring structure.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.

The disclosed and claimed subject matter relates to photoresist stripper solutions that include (i) one or more inorganic bases; (ii) two or more organic solvents; (iii) one or more corrosion inhibitors and can optionally include (iv) one or more secondary solvent(s).

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features comprising vias and/or trenches on one or more substrates.