Ulvac, Inc.

[SUMMARY] A sputtering method includes disposing a carbon target (Tg) and a film-forming object (Wf) inside a vacuum chamber ( 1 ); evacuating the vacuum chamber to a predetermined pressure by a vacuum pump (Vp); subsequently introducing a sputtering gas into the vacuum chamber; charging the target with electric power to form a plasma atmosphere such that the target gets sputtered by the ions of the sputtering gas in the plasma, whereby carbon particles splashed from the target are caused to be adhered to, and deposited on, a surface of the film-forming object, thereby forming a carbon film. The target is cooled by heat exchanging with a first refrigerant at least during the time when the target receives radiant heat from the plasma; wherein the temperature of the first refrigerant is controlled to keep the temperature of the first refrigerant below 263K.

Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

A gate valve has a communication block with a communication passage and a valve unit having a valve plate movable between a partitioning position and an open position. A lower end part of the valve plate comes into pressurized contact with a surface of a band-shaped base material transferred through the communication passage between a first chamber and a second chamber. Due to a force of this pressurized contact, a back surface of the base material is seated on a seating surface provided in the communication passage. A groove is formed in the lower end of the valve plate, and a roller-shaped sealing member with a central shaft is inserted into the groove. Opening parts are formed in both axial side-wall surfaces of the groove such that the end parts of the central shaft of the sealing member are inserted into the opening parts and pivotally supported with a clearance.

A cathode device includes a rotation plate to which a magnetic circuit is fixed, a rotation mechanism including a rotation shaft that rotates the rotation plate when receiving power from a motor, and a linear motion parallel link mechanism. The parallel link mechanism includes an end effector, six links each having a distal end and a proximal end, and three linear motion mechanisms. The end effector rotationally supports the rotation shaft, the distal ends of the links are connected to the end effector, the links radially extend from the end effector, and the linear motion mechanisms move the proximal ends of adjacent two of the links in one direction when receiving power from respective linear actuators. A controller controls a change in position of the rotation shaft performed by a cooperative operation of the linear actuators, and controls rotation of the rotation shaft operated by the motor.

A gate valve comprising a plurality of first force-applying units built in a valve box; a second force-applying unit disposed between a first movable valve and a second movable valve; and a third force-applying unit. The first force-applying units are driven by incompressible fluid and have a function of applying a force to the first movable valve to be directed to the first opening portion in the flow passage direction and thereby causing the seal portion to be in close contact with a valve box inner surface located at the periphery of the first opening portion. The gate valve includes an incompressible-fluid driver that drives, the first force-applying units by incompressible fluid.

A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n 1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n 2Deff =2 a (where m is the order, λ is the design wavelength, n 2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall ( 10 d ) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.

Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.

A vacuum pump according to an embodiment of the present invention includes a pump housing and a cooling pipe. The pump housing is constituted by cast iron. The cooling pipe includes an outer circumferential surface and an inner circumferential surface and is constituted by stainless steel. The cooling pipe passes through the pump housing and the outer circumferential surface which is in close contact with the pump housing, is constituted by a sensitized layer. This vacuum pump is formed such that the pump housing constituted by cast iron is casted around the cooling pipe constituted by stainless steel. The sensitized layer is provided on the outer circumferential surface of the cooling pipe, the sensitized layer is in contact with the pump housing, and the pump housing is efficiently cooled.